Crystal phase engineered quantum wells in ZnO nanowires
journal contribution
posted on 2013-01-01, 00:00 authored by V Khranovskyy, Alexey Glushenkov, Ying (Ian) ChenYing (Ian) Chen, A Khalid, H Zhang, L Hultman, B Monemar, R YakimovaCrystal phase engineered quantum wells in ZnO nanowires
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Journal
NanotechnologyVolume
24Issue
21Pagination
1 - 7Publisher
Institute of Physics Publishing LtdLocation
Bristol, EnglandPublisher DOI
ISSN
0957-4484eISSN
1361-6528Language
engPublication classification
C1 Refereed article in a scholarly journalUsage metrics
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Basal plane stacking faultsengineering approachesluminescence mechanismsmaterial interfacesphotoluminescence propertiespotential barriersType II band alignmentsZno nanowires (NWs)Science & TechnologyTechnologyPhysical SciencesNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedScience & Technology - Other TopicsMaterials SciencePhysicsCHEMICAL-VAPOR-DEPOSITIONTEMPERATURE-DEPENDENCESTACKING-FAULTSZINC-OXIDEPHOTOLUMINESCENCESEMICONDUCTORSEXCITONSENERGYBANDGAN
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