Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

Yuen, WT; Schweitzer, MO; Jones, TS; McConville, CF; Johnson, EA; MacKinnon, A; Richardson, NV; Stradling, RA

Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

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posted on 2024-06-18, 23:06 authored by WT Yuen, MO Schweitzer, TS Jones, CF McConville, EA Johnson, A MacKinnon, NV Richardson, RA Stradling

Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

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DOI - Is version of https://doi.org/10.1088/0268-1242/8/1S/088

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SOUTHAMPTON, ENGLAND

Language

English

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http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993KM53500089&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

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C1 Refereed article in a scholarly journal

Journal

Semiconductor Science and Technology

Volume

8

Pagination

S396-S399

ISSN

0268-1242

eISSN

1361-6641

Issue

1S

Publisher

IOP PUBLISHING LTD

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Keywords

Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics ENERGY LOSS SPECTROSCOPY DOPED INSB LAYERS GAAS

Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

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