Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

Yuen, W T; Schweitzer, M O; Jones, T S; McConville, Chris; Johnson, E A; MacKinnon, A; Richardson, N V; Stradling, R A

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Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

journal contribution

posted on 1993-12-01, 00:00 authored by W T Yuen, M O Schweitzer, T S Jones, Chris McConvilleChris McConville, E A Johnson, A MacKinnon, N V Richardson, R A Stradling

Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

History

Journal

Semiconductor Science and Technology

Volume

8

Issue

1S

Pagination

S396 - S399

Publisher

IOP PUBLISHING LTD

Location

SOUTHAMPTON, ENGLAND

Publisher DOI

https://doi.org/10.1088/0268-1242/8/1S/088

ISSN

0268-1242

eISSN

1361-6641

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993KM53500089&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

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Keywords

Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics ENERGY LOSS SPECTROSCOPY DOPED INSB LAYERS GAAS Condensed Matter Physics

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Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

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