Deakin University
Browse
1/1
2 files

Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

journal contribution
posted on 2013-01-01, 00:00 authored by Y Mafinejad, M Zarghami, Abbas KouzaniAbbas Kouzani, K Mafinezhad
This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.

History

Journal

IEICE electronics express

Volume

10

Season

Article 20130746

Pagination

1 - 8

Location

Tokyo, Japan

Open access

  • Yes

ISSN

1349-2543

eISSN

1349-9467

Language

eng

Publication classification

C1 Refereed article in a scholarly journal

Copyright notice

2013, Institute of Electronics, Information and Communication Engineers