Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers

Mahboob, I; Veal, TD; McConville, CF

Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers

Version 2 2024-06-18, 23:05

Version 1 2020-09-18, 14:35

journal contribution

posted on 2024-06-18, 23:05 authored by I Mahboob, TD Veal, CF McConville

Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers

History

Journal

IEE Proceedings: Optoelectronics

Volume

150

Pagination

102-104

Publisher DOI

https://doi.org/10.1049/ip-opt:20030045

ISSN

1350-2433

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000181940600027&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

CN.1 Other journal article

Issue

1

Publisher

IEE-INST ELEC ENG

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Keywords

Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Optics Telecommunications Engineering X-RAY-DIFFRACTION BAND-STRUCTURE V ALLOYS SPECTROSCOPY GANXAS1-X ENERGY GAAS GAP

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Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers

History

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ISSN

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Author URL

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Issue

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Keywords

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