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Device characterization for distortion prediction including memory effects

Version 2 2024-06-18, 00:10
Version 1 2017-05-12, 14:51
journal contribution
posted on 2024-06-18, 00:10 authored by J Brinkhoff, AE Parker
A low-frequency nonlinear two-port characterization system is described and methods are developed to allow the automatic extraction of device and circuit parameters necessary for intermodulation prediction including memory effects. Nonlinear characterization has been achieved up to fifth-order.

History

Journal

IEEE Microwave and Wireless Components Letters

Volume

15

Pagination

171-173

Location

Piscataway, N.J.

ISSN

1531-1309

Language

eng

Publication classification

CN.1 Other journal article

Copyright notice

2005, IEEE

Issue

3

Publisher

Institute of Electrical and Electronics Engineers (IEEE)