Device characterization for distortion prediction including memory effects
Version 2 2024-06-18, 00:10Version 2 2024-06-18, 00:10
Version 1 2017-05-12, 14:51Version 1 2017-05-12, 14:51
journal contribution
posted on 2024-06-18, 00:10authored byJ Brinkhoff, AE Parker
A low-frequency nonlinear two-port characterization system is described and methods are developed to allow the automatic extraction of device and circuit parameters necessary for intermodulation prediction including memory effects. Nonlinear characterization has been achieved up to fifth-order.