Device characterization for distortion prediction including memory effects

Brinkhoff, J; Parker, AE

Device characterization for distortion prediction including memory effects

https://hdl.handle.net/10536/DRO/DU:30096035
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posted on 2024-06-18, 00:10 authored by J Brinkhoff, AE Parker

A low-frequency nonlinear two-port characterization system is described and methods are developed to allow the automatic extraction of device and circuit parameters necessary for intermodulation prediction including memory effects. Nonlinear characterization has been achieved up to fifth-order.

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DOI - Is version of https://doi.org/10.1109/LMWC.2005.844215

Location

Piscataway, N.J.

Language

eng

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CN.1 Other journal article

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2005, IEEE

Journal

IEEE Microwave and Wireless Components Letters

Volume

15

Pagination

171-173

ISSN

1531-1309

Issue

3

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

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Keywords

field effect transistor (FET)amplifiers intermodulation distortion memory effects distortion measurement circuits frequency measurement voltage nonlinear distortion pulse measurements dynamic range predictive models data mining

Device characterization for distortion prediction including memory effects

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