Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high-performance 2D field effect transistors

A study is conducted to demonstrate dielectric engineering of a boron nitride/hafnium oxide (HfO2) heterostructure for high-performance 2D field effect transistors. It has been shown that placing 2D semiconductors on hexagonal boron nitride (h-BN) can yield a drastic improvement in their corresponding carrier mobilities. the capacitors are fabricated by depositing 16 nm thick HfO2 on p+-Si substrates with and without the h-BN interlayer to evaluate the dielectric characteristic of h-BN/ HfO2 heterostructured stack and investigate the corresponding device performance.