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Dielectric screening in atomically thin boron nitride nanosheets.

journal contribution
posted on 14.01.2015, 00:00 authored by Luhua LiLuhua Li, E J Santos, Tan Xing, E Cappelluti, R Roldán, Ying (Ian) ChenYing (Ian) Chen, K Watanabe, T Taniguchi
Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

History

Journal

Nano Letters: a journal dedicated to nanoscience and nanotechnology

Volume

15

Issue

1

Pagination

218 - 223

Publisher

American Chemical Society

Location

United States

ISSN

1530-6992

eISSN

1530-6992

Language

eng

Publication classification

C Journal article; C1 Refereed article in a scholarly journal

Copyright notice

2014, American Chemical Society