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Direct transfer of graphene and application in low-voltage hybrid transistors

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journal contribution
posted on 2017-01-01, 00:00 authored by H Zhu, A Liu, F Shan, Wenrong YangWenrong Yang, Colin BarrowColin Barrow, J Liu
A novel scotch tape assisted direct transfer of graphene onto different flexible and rigid substrates, including paper, polyethylene terephthalate, flat and curved glass, SiO 2 /Si, and a solution-processed high-k dielectric layer is presented. This facile graphene transfer process is driven by the difference in adhesion energy of graphene with respect to tape and a target substrate. In addition, the graphene films transferred by scotch tape are found to be cleaner, more continuous, less doped and higher-quality than those transferred by PMMA. Based on that, the tape transferred graphene is employed as a carrier transport layer in oxide thin-film transistors (TFTs) with different gate dielectrics (i.e., SiO 2 and high-k ZrO 2 ). The In 2 O 3 /graphene/SiO 2 TFTs exhibit a high electron mobility of 404 cm 2 V −1 s −1 and a high on/off current ratio of 10 5 , while the counterpart In 2 O 3 /graphene/ZrO 2 TFTs exhibit improved electron transport properties at an ultra-low operating voltage of 3 V, which is 20 times lower than that of SiO 2 -based devices. In contrast, the ZrO 2 -based TFTs with PMMA-transferred graphene exhibit no detective electrical properties. Therefore, the proposed scotch tape assisted transfer method will be particularly useful for the production of graphene films and other two-dimensional materials in more cost-effective and environmentally friendly modes for broad practical applications beyond graphene-based field-effect transistors (GFETs).



RSC advances






2172 - 2179


Royal Society of Chemistry


London, Eng.





Publication classification

C Journal article; C1 Refereed article in a scholarly journal

Copyright notice

2017, The Authors