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Effect of baseband impedance on FET intermodulation

journal contribution
posted on 2003-03-01, 00:00 authored by James Brinkhoff, A E Parker
The intermodulation performance of an FET in the common-source configuration is dependent on the impedance presented to its gate and drain terminals, not only at fundamental, but also at harmonic and baseband frequencies. At baseband frequencies, these terminating impedances are usually determined by the bias networks, which may have varying impedance over the frequencies involved. This can give rise to asymmetry in two-tone intermodulation levels, and changing intermodulation levels with tone spacing, as previous studies have shown. In this paper, an FET is analyzed to gain an understanding, useful to the circuit designer, of the contributing mechanisms, and to enable the prediction of bias points and the design of networks that can minimize or maximize these effects. Compact formulas are given to facilitate this. An amplifier was tested, showing good agreement between the theoretical and measured results.

History

Journal

IEEE transactions on microwave theory and techniques

Volume

51

Issue

3

Pagination

1045 - 1051

Publisher

IEEE

Location

Piscataway, N.J.

ISSN

0018-9480

eISSN

1557-9670

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

2003, IEEE