Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer

journal contribution

posted on 2025-01-21, 05:10 authored by Souvik Kundu, Ajit KumarAjit Kumar, S Banerjee, P Banerji

Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer

History

Journal

Materials Science in Semiconductor Processing

Volume

15

Pagination

386-392

Location

Amsterdam, The Netherlands

Publisher DOI

https://doi.org/10.1016/j.mssp.2012.01.001

Open access

No

ISSN

1369-8001

eISSN

1873-4081

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Issue

4

Publisher

Elsevier

Publication URL

https://doi.org/10.1016/j.mssp.2012.01.001

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All Rights Reserved

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