Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states

Piper, LFJ; Veal, TD; Lowe, MJ; McConville, CF

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Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states

Version 2 2024-06-13, 12:12

Version 1 2020-09-22, 15:22

journal contribution

posted on 2024-06-13, 12:12 authored by LFJ Piper, TD Veal, MJ Lowe, CF McConville

Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states

History

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

73

Article number

ARTN 195321

Publisher DOI

https://doi.org/10.1103/PhysRevB.73.195321

ISSN

1098-0121

eISSN

1550-235X

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000237950400089&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

Issue

19

Publisher

AMER PHYSICAL SOC

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Keywords

Science & Technology Technology Physical Sciences Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics SCHOTTKY-BARRIER HEIGHTS ENERGY-LOSS SPECTROSCOPY NATIVE DEFECTS BAND ACCUMULATION LAYERS SEMICONDUCTORS PARAMETERS CONTINUUM PLASMON

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File(s) under permanent embargo

Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states

History

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Article number

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eISSN

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