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Electronic transport in Si:P δ -doped wires
journal contribution
posted on 2015-12-11, 00:00 authored by J S Smith, Daniel DrummDaniel Drumm, A Budi, J A Vaitkus, J H Cole, S P Russo©2015 American Physical Society. Despite the importance of Si:P δ-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a δ-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of δ-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of δ-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a δ-doped wire, which we find to be at least 4.6 nm.
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Journal
Physical Review B - condensed matter and materials physicsVolume
92Issue
23Article number
235420Pagination
1 - 12Publisher
American Physical SocietyLocation
College Park, Md.Publisher DOI
ISSN
1098-0121eISSN
1550-235XLanguage
engPublication classification
C1 Refereed article in a scholarly journalCopyright notice
2015, American Physical SocietyUsage metrics
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