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Electronic transport in Si:P δ -doped wires

Version 2 2024-06-04, 13:11
Version 1 2018-07-10, 10:32
journal contribution
posted on 2024-06-04, 13:11 authored by JS Smith, Daniel DrummDaniel Drumm, A Budi, JA Vaitkus, JH Cole, SP Russo
©2015 American Physical Society. Despite the importance of Si:P δ-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a δ-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of δ-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of δ-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a δ-doped wire, which we find to be at least 4.6 nm.

History

Journal

Physical Review B - condensed matter and materials physics

Volume

92

Article number

235420

Pagination

1-12

Location

College Park, Md.

ISSN

1098-0121

eISSN

1550-235X

Language

eng

Publication classification

C1 Refereed article in a scholarly journal

Copyright notice

2015, American Physical Society

Issue

23

Publisher

American Physical Society

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