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Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

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journal contribution
posted on 2009-07-07, 00:00 authored by D Shakhvorostov, R Nistor, L Krusin-Elbaum, G Martyna, D Newns, B Elmegreen, X H Liu, Zak Hughes, S Paul, C Cabral, S Raoux, D Shrekenhamer, D Basov, Y Song, M Müser
Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

History

Journal

National academy of sciences.Proceedings

Volume

106

Issue

27

Pagination

10907 - 10911

Publisher

National Academy of Sciences

Location

Washington, D. C.

ISSN

0027-8424

eISSN

1091-6490

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

2009, National Academy of Sciences (NAS)

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