Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Shakhvorostov, D; Nistor, R; Krusin-Elbaum, L; Martyna, G; Newns, D; Elmegreen, B; Liu, X H; Hughes, Zak; Paul, S; Cabral, C; Raoux, S; Shrekenhamer, D; Basov, D; Song, Y; Müser, M

hughes-evidenceforelectronic-2009.pdf (1.2 MB)

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

journal contribution

posted on 2009-07-07, 00:00 authored by D Shakhvorostov, R Nistor, L Krusin-Elbaum, G Martyna, D Newns, B Elmegreen, X H Liu, Zak Hughes, S Paul, C Cabral, S Raoux, D Shrekenhamer, D Basov, Y Song, M Müser

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

History

Journal

National academy of sciences.Proceedings

Volume

106

Issue

27

Pagination

10907 - 10911

Publisher

National Academy of Sciences

Location

Washington, D. C.

Publisher DOI

https://doi.org/10.1073/pnas.0812942106

Link to full text

http://www.pnas.org/content/106/27/10907.full.pdf

ISSN

0027-8424

eISSN

1091-6490

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

2009, National Academy of Sciences (NAS)

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Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Research Publications

Keywords

Ab initio simulations Ac conductivity electronic phase transitions structural phase change Science & Technology Multidisciplinary Sciences Science & Technology - Other Topics

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

History

Journal

Volume

Issue

Pagination

Publisher

Location

Publisher DOI

Link to full text

ISSN

eISSN

Language

Publication classification

Copyright notice

Usage metrics

Read the peer-reviewed publication

Categories

Keywords

Licence

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