Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring
Location
Amsterdam, The NetherlandsLanguage
engNotes
Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.Publication classification
C1.1 Refereed article in a scholarly journalJournal
Nano Materials ScienceVolume
2Pagination
346-352ISSN
2096-6482eISSN
2589-9651Issue
4Publisher
Elsevier
