Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014)

Wang, Lifeng; Wu, Bin; Chen, Jisi; Liu, Hongtao; Hu, Pingan; Liu, Yunqi

Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014)

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posted on 2024-07-25, 05:54 authored by Lifeng Wang, Bin Wu, Jisi Chen, Hongtao Liu, Pingan Hu, Yunqi Liu

Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014)

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Journal

Advanced Materials

Volume

26

Pagination

1474-1474

ISSN

0935-9648

eISSN

1521-4095

Language

eng

Publication classification

E3.1 Extract of paper

Issue

10

Publisher

Wiley

Publication URL

http://dx.doi.org/10.1002/adma.201470062

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Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014)

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