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Formation of defects in boron nitride by low energy ion bombardment

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journal contribution
posted on 01.01.2009, 00:00 authored by R Peter, A Bozanic, M Petravic, Ying (Ian) ChenYing (Ian) Chen, L J Fan, Y W Yang
Formation of defects in hexagonal and cubic boron nitride (h -BN and c -BN, respectively) under low-energy argon or nitrogen ion-bombardment has been studied by near-edge x-ray absorption fine structure (NEXAFS) around boron and nitrogen K -edges. Breaking of B-N bonds for both argon and nitrogen bombardment and formation of nitrogen vacancies, VN, has been identified from the B K -edge of both h -BN and c -BN, followed by the formation of molecular nitrogen, N2, at interstitial positions. The presence of N 2 produces an additional peak in photoemission spectra around N 1s core level and a sharp resonance in the low-resolution NEXAFS spectra around N K -edge, showing the characteristic vibrational fine structure in high-resolution measurements. In addition, several new peaks within the energy gap of BN, identified by NEXAFS around B and N K -edges, have been assigned to boron or nitrogen interstitials, in good agreement with theoretical predictions. Ion bombardment destroys the cubic phase of c -BN and produces a phase similar to a damaged hexagonal phase. © 2009 American Institute of Physics.

History

Journal

Journal of applied physics

Volume

106

Issue

8

Season

Article number 083523

Publisher

American Institute of Physics

Location

New York, N. Y.

ISSN

0021-8979

eISSN

1089-7550

Language

eng

Publication classification

C1 Refereed article in a scholarly journal