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Frontispiece: GaN and Gax In1-x N Nanoparticles with tunable indium content: synthesis and characterization
journal contributionposted on 2015-12-14, 00:00 authored by Weiwei LeiWeiwei Lei, M G Willinger, M Antonietti, C Giordano
Optoelectronic Devices A captivating peculiarity of GaInN alloys is a tunable band gap, depending on the Ga/In ratio, where the pure nitrides are bright yellow (GaN) or dark blue (InN). Gax In1-x N nanoparticles were prepared by a bottom-up approach (the urea glass route). The incorporation of an increasing amount of indium in the GaN structure is indicated by different colors (i.e., different band gaps), and the alloys are further investigated by TEM and optical microscopy. More information can be found in the Full Paper by C. Giordano et al. on page 18976 ff.