Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications

journal contribution

posted on 2024-06-18, 23:01 authored by L Buckle, SD Coomber, T Ashley, PH Jefferson, D Walker, TD Veal, CF McConville, PA Thomas

Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications

History

Journal

Microelectronics Journal

Volume

40

Pagination

399-402

Location

Univ Nottingham, Nottingham, ENGLAND

ISSN

0026-2692

eISSN

1879-2391

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000264694700005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1.1 Refereed article in a scholarly journal

Issue

3

Publisher

ELSEVIER SCI LTD

Usage metrics

Categories

Electrical engineering not elsewhere classified

Keywords

Science & Technology Technology Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Dilute nitride Indium antimonide InSb Gallium antimonide GaSb Infrared MWIR LWIR ALLOYS MBE

Licence

All Rights Reserved

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