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Growth of dilute GaNSb by plasma-assisted MBE
journal contributionposted on 2005-05-01, 00:00 authored by L Buckle, B R Bennett, S Jollands, T D Veal, N R Wilson, B N Murdin, Chris McConvilleChris McConville, T Ashley
Using plasma-assisted molecular beam epitaxy (MBE), GaNxSb1−x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4 μm range.