Growth of dilute GaNSb by plasma-assisted MBE

Using plasma-assisted molecular beam epitaxy (MBE), GaNxSb1−x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4 μm range.