Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs
Version 2 2024-05-30, 16:03
Version 1 2022-03-14, 09:27
journal contribution
posted on 2024-05-30, 16:03 authored by H Yang, G Wang, Y Guo, Lifeng Wang, B Tan, S Zhang, X Zhang, J Zhang, Y Shuai, J Lin, D Jia, PA HuWafer-scale vertical hexagonal boron nitride/graphene heterostructures with clear interfaces are realized via a two-step metallic alloy assisted epitaxial growth method.
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Journal
NanoscalePagination
1-12Location
Cambridge, Eng.Publisher DOI
ISSN
2040-3364eISSN
2040-3372Language
engPublication classification
C1 Refereed article in a scholarly journalIssue
11Publisher
Royal Society of Chemistry (RSC)Usage metrics
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BILAYER GRAPHENECARBONChemistryChemistry, MultidisciplinaryCIRCUITSDEVICESEPITAXIAL-GROWTHINTEGRATIONLAYERMaterials ScienceMaterials Science, MultidisciplinaryMONOLAYERNanoscience & NanotechnologyPhysical SciencesPhysicsPhysics, AppliedScience & TechnologyScience & Technology - Other TopicsTechnologyTOPOLOGICAL VALLEY TRANSPORTTRANSISTORS4009 Electronics, sensors and digital hardware4016 Materials engineering4018 Nanotechnology
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