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Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with Reduced Self Heating

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Version 1 2020-09-16, 14:17
journal contribution
posted on 2024-06-13, 02:43 authored by SAO Russell, A Perez-Tomas, CF McConville, CA Fisher, DP Hamilton, PA Mawby, MR Jennings
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with Reduced Self Heating

History

Journal

IEEE Journal of the Electron Devices Society

Volume

5

Pagination

256-261

Location

Piscataway, N.J.

Publisher DOI

Open access

  • Yes

Link to full text

ISSN

2168-6734

eISSN

2168-6734

Language

eng

Author URL

Publication classification

C1 Refereed article in a scholarly journal

Issue

4

Publisher

IEEE

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    Research Publications

    Categories

    Keywords

    Science & TechnologyTechnologyEngineering, Electrical & ElectronicEngineeringFETgallium oxidemolecular beam epitaxynormally-offself-heatingsilicon carbidethreshold voltagePERFORMANCETRANSISTORS4009 Electronics, sensors and digital hardware

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    All Rights Reserved

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