High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

Tanwar, K; Wu, X; Tan, X; Smith, SC; Li, J; Chen, Ying (Ian)

High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

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posted on 2025-03-17, 03:02 authored by K Tanwar, X Wu, X Tan, SC Smith, J Li, Ying (Ian) ChenYing (Ian) Chen

Realizing Von Hove singularity (VHS) and extended flat bands of graphene near the Fermi level (EF) to explore many-body interactions with a high tendency towards superconductivity.

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DOI - Is version of https://doi.org/10.1039/d3mh01213a

Location

London, Eng.

Open access

No

Language

eng

Publication classification

C1 Refereed article in a scholarly journal

Journal

Materials Horizons

Volume

11

Pagination

1046-1053

ISSN

2051-6347

eISSN

2051-6355

Issue

4

Publisher

Royal Society of Chemistry

Publication URL

https://doi.org/10.1039/d3mh01213a

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Keywords

Chemistry Chemistry, Multidisciplinary Materials Science Materials Science, Multidisciplinary Physical Sciences Science & Technology Technology TOTAL-ENERGY CALCULATIONS WAVE

High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

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Open access

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