falin-highthermalconductivity-2019.pdf (1000.73 kB)
High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
journal contribution
posted on 2019-06-07, 00:00 authored by Qiran CaiQiran Cai, D Scullion, W Gan, Aleksey Falin, Shunying ZhangShunying Zhang, K Watanabe, T Taniguchi, Ying (Ian) ChenYing (Ian) Chen, E J G Santos, Luhua LiLuhua LiHeat management has become more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation is of great importance. Here, we report that high-quality one-atom-thin hexagonal boron nitride (BN) has a thermal conductivity (k) of 751 W/mK at room temperature, the second largest k per unit weight among all semiconductors and insulators. The k of atomically thin BN decreases with increased thickness. Our molecular dynamic simulations accurately reproduce this trend, and the density functional theory (DFT) calculations reveal the main scattering mechanism. The thermal expansion coefficients of monolayer to trilayer BN at 300 to 400 K are also experimentally measured for the first time. Owing to its wide bandgap, high thermal conductivity, outstanding strength, good flexibility, and excellent thermal and chemical stability, atomically thin BN is a strong candidate for heat dissipation applications, especially in the next generation of flexible electronic devices.
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Journal
Science advancesVolume
5Issue
6Pagination
1 - 8Publisher
American Association for the Advancement of Science (A A A S)Location
Washington, D.C.Publisher DOI
eISSN
2375-2548Language
engPublication classification
C1 Refereed article in a scholarly journalCopyright notice
2019, The Authors, some rights reservedUsage metrics
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