InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

journal contribution

posted on 2024-06-13, 02:43 authored by PDC King, TD Veal, CE Kendrick, LR Bailey, SM Durbin, CF McConville

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

History

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

78

Article number

ARTN 033308

Publisher DOI

https://doi.org/10.1103/PhysRevB.78.033308

ISSN

1098-0121

eISSN

1550-235X

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000258190300024&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

Issue

3

Publisher

AMER PHYSICAL SOC

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Keywords

Science & Technology Technology Physical Sciences Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics SEMICONDUCTOR INTERFACES INN GAN HETEROJUNCTIONS NITRIDE BARRIER HYDROGEN DEVICES ALN

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All Rights Reserved

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