InSb n-Channel Enhancement Mode Misfet Grown by Molecular Beam Epitaxy

https://hdl.handle.net/10536/DRO/DU:30142187
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journal contribution

posted on 2024-06-18, 23:06 authored by T Ashley, AB Dean, CT Elliott, CF McConville, CR Whitehouse

InSb n-Channel Enhancement Mode Misfet Grown by Molecular Beam Epitaxy

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Related Materials

1.
DOI - Is version of https://doi.org/10.1049/el:19890201

Location

Piscataway, N.J.

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1989T421900028&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C2.1 Other contribution to refereed journal

Journal

Electronics Letters

Volume

25

Pagination

289-290

ISSN

0013-5194

Issue

4

Publisher

IEEE

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Keywords

Science & Technology Technology Engineering, Electrical & Electronic Engineering

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All Rights Reserved

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