Influence of N2O flow rate on reliability of SiOx films deposited by SiH4-N2O gas mixture plasma

SiO_x films have several advantages as an interlayer dielectric in electronic devices owing to the strong adhesion between SiO_x and the substrate. In this study, the coating performance as a function of the N₂O flow rate was evaluated by electrochemical impedance spectroscopy and potentiodynamic polarization tests in an undisturbed environment. In addition, the coatings were examined by atomic force microscopy and Fourier transform infrared reflection spectroscopy. The SiO_x films on a stainless-steel substrate showed the highest coating performance at a N₂O flow rate of 120 sccm. This was attributed to the films having the lowest porosity value among those examined as a result of the fragmentation of SiO and SiO₂ bonds and the improved surface roughness.