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Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

Version 2 2024-06-18, 23:00
Version 1 2023-02-01, 01:48
journal contribution
posted on 2024-06-18, 23:00 authored by SK Vasheghani Farahani, TD Veal, AM Sanchez, O Bierwagen, ME White, S Gorfman, PA Thomas, JS Speck, CF McConville
Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

History

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

86

Article number

ARTN 245315

ISSN

1098-0121

eISSN

1550-235X

Language

English

Publication classification

CN.1 Other journal article

Issue

24

Publisher

AMER PHYSICAL SOC