Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

Vasheghani Farahani, SK; Veal, TD; Sanchez, AM; Bierwagen, O; White, ME; Gorfman, S; Thomas, PA; Speck, JS; McConville, CF

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

journal contribution

posted on 2024-06-18, 23:00 authored by SK Vasheghani Farahani, TD Veal, AM Sanchez, O Bierwagen, ME White, S Gorfman, PA Thomas, JS Speck, CF McConville

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

History

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

86

Article number

ARTN 245315

Link to full text

https://link.aps.org/accepted/10.1103/PhysRevB.86.245315

ISSN

1098-0121

eISSN

1550-235X

Language

English

Publication classification

CN.1 Other journal article

Issue

24

Publisher

AMER PHYSICAL SOC

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Keywords

Science & Technology Technology Physical Sciences Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics VAPOR-PHASE EPITAXY R-PLANE SAPPHIRE STANNIC OXIDE ELECTRICAL PROPERTIES LATERAL OVERGROWTH TIN OXIDE GAN FILMS SCATTERING SURFACE CRYSTALS

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

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