Influence of growth conditions and polarity on interface-related electron density in InN
Version 2 2024-06-18, 23:01
Version 1 2020-09-22, 16:47
journal contribution
posted on 2024-06-18, 23:01 authored by PDC King, TD Veal, CS Gallinat, G Koblmüller, LR Bailey, JS Speck, CF McConvilleInfluence of growth conditions and polarity on interface-related electron density in InN
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Journal
Journal of Applied PhysicsVolume
104Article number
ARTN 103703Publisher DOI
ISSN
0021-8979eISSN
1089-7550Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
10Publisher
AMER INST PHYSICSUsage metrics
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No categories selectedKeywords
Science & TechnologyPhysical SciencesPhysics, AppliedPhysicsbuffer layersFermi levelgallium compoundsHall effectIII-V semiconductorsindium compoundssemiconductor growthsemiconductor thin filmsvalence bandswide band gap semiconductorsMOLECULAR-BEAM EPITAXYMULTIPLE CARRIER TRANSPORTINDIUM NITRIDEBAND-GAPSEMICONDUCTORSACCUMULATION
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