Interfacial studies and electrical characterisation of heteroepitaxial InSb on GaAs (100) grown by MBE
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Version 1 1989-02-02, 00:00Version 1 1989-02-02, 00:00
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posted on 2024-06-18, 23:06 authored by CF McConville, CR Whitehouse, GM Williams, AG Cullis, T Ashley, MS Skolnick, GT Brown, SJ CourtneyInterfacial studies and electrical characterisation of heteroepitaxial InSb on GaAs (100) grown by MBE
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EnglishPublication classification
C1 Refereed article in a scholarly journalJournal
Journal of Crystal GrowthVolume
95Pagination
228-234ISSN
0022-0248Issue
1-4Publisher
ELSEVIER SCIENCE BVUsage metrics
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