Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy

Jones, TS; Ding, MQ; Richardson, NV; McConville, CF

Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy

Version 2 2024-06-18, 23:06

Version 1 2020-09-17, 14:46

journal contribution

posted on 2024-06-18, 23:06 authored by TS Jones, MQ Ding, NV Richardson, CF McConville

Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy

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Journal

Surface Science

Volume

247

Pagination

1-12

Publisher DOI

https://doi.org/10.1016/0039-6028(91)90189-Y

ISSN

0039-6028

Language

English

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http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1991FM84700009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

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C1 Refereed article in a scholarly journal

Issue

1

Publisher

ELSEVIER SCIENCE BV

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Keywords

Science & Technology Physical Sciences Chemistry, Physical Physics, Condensed Matter Chemistry Physics SPACE-CHARGE LAYER COUPLED PLASMON EXCITATIONS GAAS(110)PHONON GAAS EELS

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Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy

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