Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors
Version 2 2024-06-03, 06:33
Version 1 2019-05-17, 14:35
journal contribution
posted on 2024-06-03, 06:33 authored by Lifeng Wang, B Wu, H Liu, H Wang, Y Su, Weiwei LeiWeiwei Lei, PA Hu, Y LiuLow temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors
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Journal
Science China MaterialsVolume
62Pagination
1218-1225Location
Beijing, ChinaPublisher DOI
Open access
- Yes
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2095-8226eISSN
2199-4501Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
8Publisher
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No categories selectedKeywords
Science & TechnologyTechnologyMaterials Science, MultidisciplinaryMaterials ScienceCHEMICAL-VAPOR-DEPOSITIONOPTICAL-PROPERTIESCRYSTALLINEMONOLAYERCVDTwo dimensional (2D) materialsWhite grapheneHexagonal boron nitride flakesGraphene-based field-effect transistorsh-BN100708 Nanomaterials091205 Functional Materials4016 Materials engineering4018 Nanotechnology
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