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Multi-microscopy characterization of threading dislocations in CVD-grown diamond films

journal contribution
posted on 2024-05-09, 22:59 authored by H Yan, E Postelnicu, T Nguyen, Santiago Corujeira GalloSantiago Corujeira Gallo, A Stacey, K Mukherjee
We present site-coincident imaging of a high dislocation density boron-doped chemical vapor deposition-grown homoepitaxial (001) diamond film using electron channeling contrast imaging (ECCI), cathodoluminescence, transmission electron microscopy (TEM), and scanning secondary ion mass spectroscopy (SIMS). With growing interest in large area heteroepitaxial substrates, we show that ECCI is a promising technique to accurately evaluate dislocations in diamond films. We find the electron backscatter yield is sufficient to distinguish individual threading dislocations in ECCI despite the low atomic number of carbon, and we have generally good agreement between dislocations observed in ECCI and TEM of the same region. Importantly, relying on luminescence in the 430 nm dislocation-related A-band alone results in an underestimation of the defect density as we find only 20%-40% of the threading dislocations luminesce. We further show that dislocations do not perturb the spatial uniformity of boron doping measured by SIMS, even when the dislocations are clustered with high density, and we can tentatively rule out strong segregation effects at the dislocations. Our results establish the complementary use of microscopy and microanalysis methods to rapidly characterize and understand the impact of dislocations in diamond thin films.

History

Journal

Applied Physics Letters

Volume

124

Article number

ARTN 102108

Location

Melville, NY.

ISSN

0003-6951

eISSN

1077-3118

Language

English

Publication classification

C1.1 Refereed article in a scholarly journal

Issue

10

Publisher

AIP Publishing