Multilayer InSb diodes grown by molecular beam epitaxy for near ambient temperature operation
Version 2 2024-06-18, 23:08
Version 1 2020-09-16, 15:51
journal contribution
posted on 2024-06-18, 23:08 authored by T Ashley, AB Dean, CT Elliott, MR Houlton, CF McConville, HA Tarry, CR WhitehouseMultilayer InSb diodes grown by molecular beam epitaxy for near ambient temperature operation
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Proceedings of SPIE - The International Society for Optical EngineeringVolume
1361Pagination
238-244Publisher DOI
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0277-786XPublication classification
C1.1 Refereed article in a scholarly journalIssue
pt 1Publisher
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