Multiport thru deembedding for MOSFET characterization

This letter proposes the use of a simplified single-step thru deembedding method for the multiport characterization of MOSFETs. Compared with other methods, it takes up less chip area and requires less measurement steps, both particularly important factors for multiport characterization. The thru method is compared with the multiport open-short method. Measurements of a four-port MOSFET, with corresponding deembedding structures, are used to extract the MOSFET equivalent circuit elements over bias. These results show the validity and usefulness of multiport measurements and the thru deembedding method for MOSFET characterization.