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One-Step synthesis of the pine-shaped nanostructure of aluminum nitride and its photoluminescence properties

journal contribution
posted on 2008-01-01, 00:00 authored by Weiwei LeiWeiwei Lei, Dan Liu, P Zhu, Q Wang, G Liang, J Hao, X Chen, Q Cui, G Zou
An array of pine-shaped nanostructures of aluminum nitride (AlN) was synthesized through direct reaction between Al vapor and nitrogen gas in direct current (DC) arc discharge plasma without any catalyst or template. The as-prepared nanostructure consists of many pine-needle-shaped leaves with conical shape tips. The structure, morphology, and optical property of the nanostructure have been characterized by X-ray powder diffraction, energy-dispersive X-ray spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence. A possible growth mechanism of the pine-shaped nanostructure was discussed. Two factors were found to be essential for branched nanostructure growth, i.e., the reaction time and N2 pressure. The photoluminescence spectrum of the nanostructure of AlN revealed an intense emission band, suggesting that there may be potential applications in electronic and optoelectronic nanodevices.

History

Journal

Journal of physical chemistry C

Volume

112

Issue

35

Pagination

13353 - 13358

Publisher

American Chemical Society

Location

Washington, D.C.

ISSN

1932-7447

eISSN

1932-7455

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

2008, American Chemical Society

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