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Over 1.0 mm-long boron nitride nanotubes
journal contributionposted on 22.09.2008, 00:00 authored by H Chen, Ying (Ian) ChenYing (Ian) Chen, Y Liu, L Fu, C Huang, D Llewellyn
Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 10 4 Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.
JournalChemical physics letters
Pagination130 - 133
LocationAmsterdam, The Netherlands
Publication classificationC1.1 Refereed article in a scholarly journal
Copyright notice2008, Elsevier B.V.
Read the peer-reviewed publication
Carbon nanotubes (CNTs)Boron nitride nanotubes (BNNTs)Microelectromechanical systems (MEMS)SynthesisGrowthInsulationPhysicsChemistryMolecular sciencesMaterialsBiological systemsScience & TechnologyPhysical SciencesChemistry, PhysicalPhysics, Atomic, Molecular & ChemicalCARBON NANOTUBESBN NANOTUBESBAMBOOFE