File(s) under permanent embargo

Over 1.0 mm-long boron nitride nanotubes

journal contribution
posted on 22.09.2008, 00:00 authored by H Chen, Ying (Ian) ChenYing (Ian) Chen, Y Liu, L Fu, C Huang, D Llewellyn
Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 10 4 Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.

History

Journal

Chemical physics letters

Volume

463

Issue

1-3

Pagination

130 - 133

Publisher

Elsevier BV

Location

Amsterdam, The Netherlands

ISSN

0009-2614

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

2008, Elsevier B.V.