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Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(0 0 1) surfaces
Version 2 2024-06-18, 23:04Version 2 2024-06-18, 23:04
Version 1 2020-09-18, 14:24Version 1 2020-09-18, 14:24
journal contribution
posted on 2024-06-18, 23:04 authored by MJ Lowe, TD Veal, CF McConville, GR Bell, S Tsukamoto, N KoguchiPassivation and reconstruction-dependent electron accumulation at sulphur treated InAs(0 0 1) surfaces
History
Journal
Surface ScienceVolume
523Article number
PII S0039-6028(02)02416-0Pagination
179-188Publisher DOI
ISSN
0039-6028Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
1-2Publisher
ELSEVIER SCIENCE BVUsage metrics
Categories
Keywords
Science & TechnologyPhysical SciencesChemistry, PhysicalPhysics, Condensed MatterChemistryPhysicsindium arsenideelectron energy loss spectroscopy (EELS)plasmonselectrical transport (conductivity, resistivity, mobility, etc.)semiconducting surfacesRAY PHOTOELECTRON-SPECTROSCOPYPOLAR SURFACESGAAS-SURFACESINASDIFFRACTIONLAYERSSULFIDESTATESINSB
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