kouzani-pishapedmems-2009.pdf (265.72 kB)
Pi-shaped MEMS architecture for lowering actuation voltage of RF switching
journal contribution
posted on 2009-10-25, 00:00 authored by Y Mafinejad, Abbas KouzaniAbbas Kouzani, K Mafinezhad, A GolmakaniA wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a high impedance short transmission line. The device can act as a switch for any desired frequency whilst requiring only 12volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.
History
Journal
IEICE electronics expressVolume
6Issue
20Pagination
1483 - 1489Publisher
Denshi Jouhou Tsuushin Gakkai (Institute of Electronics Information and Communication Engineers)Location
Tokyo, JapanISSN
1349-2543eISSN
1349-9467Language
engPublication classification
C1 Refereed article in a scholarly journalCopyright notice
2009, The AuthorUsage metrics
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