Plasmon damping in molecular beam epitaxial-grown InAs(100)

Veal, TD; Bell, GR; McConville, CF

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Plasmon damping in molecular beam epitaxial-grown InAs(100)

Version 2 2024-06-18, 23:04

Version 1 2020-09-18, 14:18

journal contribution

posted on 2024-06-18, 23:04 authored by TD Veal, GR Bell, CF McConville

Plasmon damping in molecular beam epitaxial-grown InAs(100)

History

Journal

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volume

20

Pagination

1766-1770

Location

SANTA FE, NEW MEXICO

Publisher DOI

https://doi.org/10.1116/1.1491541

ISSN

1071-1023

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000177510500079&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1.1 Refereed article in a scholarly journal

Issue

4

Publisher

A V S AMER INST PHYSICS

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Keywords

Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics ELECTRON ACCUMULATION LAYERS INAS SURFACES TRANSPORT GAAS INSB

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File(s) not publicly available

Plasmon damping in molecular beam epitaxial-grown InAs(100)

History

Journal

Volume

Pagination

Location

Publisher DOI

ISSN

Language

Author URL

Publication classification

Issue

Publisher

Usage metrics

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Keywords

Licence

Exports