Pre-annealing effects on al metallization properties in high density FeRAM device
Version 2 2024-06-05, 01:21
Version 1 2021-05-13, 08:51
journal contribution
posted on 2024-06-05, 01:21 authored by KW Cho, Jinho Choi, HS Yu, SY Kweon, SJ Yeom, NK Kim, ES Choi, HJ Sun, SK Hong, TW Hong, IH Kim, JI Lee, SC Ur, YG Lee, SL Ryu, SK ChoiPre-annealing effects on al metallization properties in high density FeRAM device
History
Journal
INTEGRATED FERROELECTRICSVolume
81Pagination
113-122Location
Shanghai, PEOPLES R CHINAPublisher DOI
Start date
2005-04-17End date
2005-04-20ISSN
1058-4587eISSN
1607-8489Language
EnglishPublication classification
C1.1 Refereed article in a scholarly journalIssue
1Publisher
TAYLOR & FRANCIS LTDUsage metrics
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Keywords
Science & TechnologyTechnologyPhysical SciencesEngineering, Electrical & ElectronicPhysics, AppliedPhysics, Condensed MatterEngineeringPhysicshigh density FeRAMsputtering methodAl metallization processpre-annealingtungsten oxidationBLT THIN-FILMSFERROELECTRIC PROPERTIESCAPACITOR STRUCTURE(BI,LA)(4)TI3O12INTEGRATION
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