Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Colakerol, L; Veal, TD; Jeong, HK; Plucinski, L; Demasi, A; Learmonth, T; Glans, PA; Wang, S; Zhang, Y; Piper, LFJ; Jefferson, PH; Fedorov, A; Chen, TC; Moustakas, TD; McConville, CF; Smith, KE

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

journal contribution

posted on 2024-06-13, 12:13 authored by L Colakerol, TD Veal, HK Jeong, L Plucinski, A Demasi, T Learmonth, PA Glans, S Wang, Y Zhang, LFJ Piper, PH Jefferson, A Fedorov, TC Chen, TD Moustakas, CF McConville, KE Smith

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

History

Journal

Physical Review Letters

Volume

97

Article number

ARTN 237601

Location

United States

ISSN

0031-9007

eISSN

1079-7114

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000242708900065&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

Issue

23

Publisher

AMER PHYSICAL SOC

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Keywords

Science & Technology Physical Sciences Physics, Multidisciplinary Physics CHARGE ACCUMULATION INN FILMS BAND-GAP

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

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