SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Version 2 2024-06-02, 23:25Version 2 2024-06-02, 23:25
Version 1 2023-11-02, 05:14Version 1 2023-11-02, 05:14
journal contribution
posted on 2024-06-02, 23:25 authored by DH ZHANG, K RADHAKRISHNAN, SF YOON, HM LI, AW LEK, Eric LauEric LauSOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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Journal
THIN SOLID FILMSVolume
235Pagination
1-5ISSN
0040-6090Language
EnglishPublication classification
C4.1 Letter or noteIssue
1-2Publisher
ELSEVIER SCIENCE SA LAUSANNEPublication URL
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