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SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

Version 2 2024-06-02, 23:25
Version 1 2023-11-02, 05:14
journal contribution
posted on 2024-06-02, 23:25 authored by DH ZHANG, K RADHAKRISHNAN, SF YOON, HM LI, AW LEK, Eric LauEric Lau
SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

History

Journal

THIN SOLID FILMS

Volume

235

Pagination

1-5

ISSN

0040-6090

Language

English

Publication classification

C4.1 Letter or note

Issue

1-2

Publisher

ELSEVIER SCIENCE SA LAUSANNE