Sputter rate measurements of Cu(In,Ga)Se2 absorber layers with varied Ga ratios, primary voltage, and angle of incidence by secondary ion mass spectrometry

Claypoole, Jesse; Novak, Steve; Altwerger, Mark; Dwyer, Dan; Haldar, Pradeep; Eisaman, Matt; Efstathiadis, Harry

Sputter rate measurements of Cu(In,Ga)Se₂ absorber layers with varied Ga ratios, primary voltage, and angle of incidence by secondary ion mass spectrometry

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posted on 2024-03-26, 05:24 authored by Jesse Claypoole, Steve Novak, Mark Altwerger, Dan DwyerDan Dwyer, Pradeep Haldar, Matt Eisaman, Harry Efstathiadis

Sputter rate measurements of Cu(In,Ga)Se₂ absorber layers with varied Ga ratios, primary voltage, and angle of incidence by secondary ion mass spectrometry

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Journal

JOURNAL OF ALLOYS AND COMPOUNDS

Volume

696

Pagination

808-813

Publisher DOI

https://doi.org/10.1016/j.jallcom.2016.12.007

ISSN

0925-8388

eISSN

1873-4669

Language

English

Publication classification

C1.1 Refereed article in a scholarly journal

Publisher

ELSEVIER SCIENCE SA

Publication URL

http://dx.doi.org/10.1016/j.jallcom.2016.12.007

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Keywords

Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Secondary ion mass spectrometry (SIMS)Absorber layer Semiconductors Thin films Photovoltaics Sputter rate SOLAR-CELLS

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Sputter rate measurements of Cu(In,Ga)Se2 absorber layers with varied Ga ratios, primary voltage, and angle of incidence by secondary ion mass spectrometry

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Sputter rate measurements of Cu(In,Ga)Se₂ absorber layers with varied Ga ratios, primary voltage, and angle of incidence by secondary ion mass spectrometry