Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Tuna, O; Linhart, WM; Lutsenko, EV; Rzheutski, MV; Yablonskii, GP; Veal, TD; McConville, CF; Giesen, C; Kalisch, H; Vescan, A; Heuken, M

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Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Version 2 2024-06-18, 23:00

Version 1 2022-11-30, 03:28

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posted on 2024-06-18, 23:00 authored by O Tuna, WM Linhart, EV Lutsenko, MV Rzheutski, GP Yablonskii, TD Veal, CF McConville, C Giesen, H Kalisch, A Vescan, M Heuken

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

History

Journal

Journal of Crystal Growth

Volume

358

Pagination

51-56

Publisher DOI

https://doi.org/10.1016/j.jcrysgro.2012.07.040

ISSN

0022-0248

eISSN

1873-5002

Language

English

Publication classification

C1.1 Refereed article in a scholarly journal

Issue

1

Publisher

ELSEVIER

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Keywords

Science & Technology Physical Sciences Technology Crystallography Materials Science, Multidisciplinary Physics, Applied Materials Science Physics InGaN III-V semiconductors Chemical vapor deposition processes InN interlayer BAND-GAP ACCUMULATION DEPENDENCE FILMS

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Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

History

Journal

Volume

Pagination

Publisher DOI

ISSN

eISSN

Language

Publication classification

Issue

Publisher

Usage metrics

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Keywords

Licence

Exports