Sulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces
Version 2 2024-06-18, 23:05
Version 1 2020-09-18, 14:32
journal contribution
posted on 2024-06-18, 23:05 authored by MJ Lowe, TD Veal, AP Mowbray, CF McConvilleSulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces
History
Journal
Surface ScienceVolume
544Pagination
320-328Publisher DOI
ISSN
0039-6028Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
2-3Publisher
ELSEVIER SCIENCE BVUsage metrics
Categories
Keywords
Science & TechnologyPhysical SciencesChemistry, PhysicalPhysics, Condensed MatterChemistryPhysicselectron density, excitation spectra calculationselectron energy loss spectroscopy (EELS)surface electronic phenomena (work functionsurface potential, surface states, etc.)plasmonschalcogensindium arsenidesemiconducting surfacesX-ray photoelectron spectroscopyV SEMICONDUCTOR SURFACESINAS(001) SURFACESPASSIVATIONINAS(100)PLASMONLAYERSSPECTROSCOPYSTATESLEEDAES
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC