Surface-gate-defined single-electron transistor in a MoS2 bilayer
Version 2 2024-06-04, 13:11
Version 1 2018-07-10, 14:15
journal contribution
posted on 2024-06-04, 13:11 authored by M Javaid, Daniel DrummDaniel Drumm, SP Russo, AD GreentreeSurface-gate-defined single-electron transistor in a MoS2 bilayer
History
Journal
NanotechnologyVolume
28Article number
ARTN 125203Pagination
1 - 9Location
EnglandISSN
0957-4484eISSN
1361-6528Language
EnglishPublication classification
C Journal article, C1.1 Refereed article in a scholarly journalIssue
12Publisher
IOP PUBLISHING LTDUsage metrics
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No categories selectedKeywords
Science & TechnologyTechnologyPhysical SciencesNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedScience & Technology - Other TopicsMaterials SciencePhysicsMoS2 bilayersingle-electron transistortransitionmetal dichalcogenidesab initioquantum dotfinite-element modelingtransport simulationsAB-INITIOCRYSTALSET030199 Analytical Chemistry not elsewhere classifiedMD Multidisciplinary3401 Analytical chemistry
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