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Surface-gate-defined single-electron transistor in a MoS2 bilayer

Version 2 2024-06-04, 13:11
Version 1 2018-07-10, 14:15
journal contribution
posted on 2017-03-24, 00:00 authored by M Javaid, Daniel DrummDaniel Drumm, Salvy P Russo, Andrew D Greentree
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2 bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2 bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.

History

Journal

Nanotechnology

Volume

28

Issue

12

Article number

125203

Pagination

1 - 9

Publisher

IOP Press

Location

London, Eng.

eISSN

1361-6528

Language

eng

Publication classification

C Journal article; C1.1 Refereed article in a scholarly journal