Surface-gate-defined single-electron transistor in a MoS2 bilayer
Version 2 2024-06-04, 13:11Version 2 2024-06-04, 13:11
Version 1 2018-07-10, 14:15Version 1 2018-07-10, 14:15
journal contribution
posted on 2017-03-24, 00:00authored byM Javaid, Daniel DrummDaniel Drumm, Salvy P Russo, Andrew D Greentree
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2 bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2 bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.