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Surface-gate-defined single-electron transistor in a MoS2 bilayer
journal contributionposted on 2017-03-24, 00:00 authored by M Javaid, Daniel DrummDaniel Drumm, Salvy P Russo, Andrew D Greentree
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2 bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2 bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
Pagination1 - 9
Publication classificationC Journal article; C1.1 Refereed article in a scholarly journal
CategoriesNo categories selected
Science & TechnologyTechnologyPhysical SciencesNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedScience & Technology - Other TopicsMaterials SciencePhysicsMoS2 bilayersingle-electron transistortransitionmetal dichalcogenidesab initioquantum dotfinite-element modelingtransport simulationsAB-INITIOCRYSTALSETcond-mat.mes-hall