Surface electronic properties of In-rich InGaN alloys grown by MOCVD
Version 2 2024-06-18, 23:00Version 2 2024-06-18, 23:00
Version 1 2022-11-30, 03:29Version 1 2022-11-30, 03:29
journal contribution
posted on 2024-06-18, 23:00 authored by WM Linhart, O Tuna, TD Veal, JJ Mudd, C Giesen, M Heuken, CF McconvilleSurface electronic properties of In-rich InGaN alloys grown by MOCVD
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Journal
Physica Status Solidi (C) Current Topics in Solid State PhysicsVolume
9Pagination
662-665Location
Glasgow, SCOTLANDISSN
1862-6351eISSN
1610-1642Language
EnglishPublication classification
C1.1 Refereed article in a scholarly journalEditor/Contributor(s)
Parbrook PJ, Martin RW, Halsall MPIssue
3-4Publisher
WILEY-V C H VERLAG GMBHUsage metrics
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