Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
Version 2 2024-06-18, 23:05
Version 1 2020-09-18, 13:45
journal contribution
posted on 2024-06-18, 23:05 authored by JG Belk, DW Pashley, CF McConville, BA Joyce, TS JonesSurface morphology during strain relaxation in the growth of InAs on GaAs(110)
History
Journal
Surface ScienceVolume
410Pagination
82-98Publisher DOI
ISSN
0039-6028Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
1Publisher
ELSEVIER SCIENCE BVUsage metrics
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Keywords
Science & TechnologyPhysical SciencesChemistry, PhysicalPhysics, Condensed MatterChemistryPhysicsdiffusion and migrationepitaxygallium arsenideindium arsenidelow index single crystal surfacesmolecular beam epitaxy (MBE)nucleationreflection high-energy electron diffraction (RHEED)scanning tunneling microscopysemiconductor-semiconductor heterostructuressingle crystal epitaxysurface structure, morphology, roughness, and topographyMOLECULAR-BEAM EPITAXYSCANNING-TUNNELING-MICROSCOPYMISFIT DISLOCATIONSGAAS(001)-C(4X4)RELIEFFILMS
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